| ARTICLE |
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| Year : 2011 | Volume
: 34
| Issue : 4 | Page : 249-252 |
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A study of gamma radiation induced changes in electrical properties of Aℓ/TeO 2 /n-Si/Aℓ mos capacitor for dosimetric applications
G Chourasiya1, TK Maity2, SL Sharma2, J Sarkar2, JC Vyas3
1 MPTS, BARC, Mumbai, India
2 Department of Physics, Indian Institute of Technology, Kharagpur, India
3 CTS, BARC, Mumbai, India
Correspondence Address:
G Chourasiya
MPTS, BARC, Mumbai
India
 Source of Support: None, Conflict of Interest: None  | Check |
DOI: 10.4103/0972-0464.106181
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The study of the effects of ionizing radiation on MOS devices has been an active area of research due to their wide range applications. Some attempts have recently been made to investigate the influence of ionizing radiation on properties of the MOS capacitor prepared by replacing SiO 2 layer by any metal oxide layer of large band gap and then to understand its response. The effect of gamma radiation on electrical properties of the Aℓ/TeO 2 /n-Si/Aℓ MOS capacitor has been studied in detail for the first time in the present work in order to understand its applicability in the post-exposure gamma radiation dosimetry. The effect of gamma radiation on the real and imaginary parts of the permittivity, dielectric loss, series resistance, ac conductivity and surface state density has been determined. These properties have been obtained by analyzing C-V and G/ω-V characteristics, recorded at a frequency 1.0 MHz of the small ac signal, for the MOS structure exposed to different levels of the gamma radiation dose. The linear variation of the dielectric constant with the gamma radiation dose over a wide range of doses, observed corresponding to the accumulation region of the MOS capacitor, possesses high potential for its application as the post-exposure gamma radiation dosimeter. |
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